• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a sputtering target of a Mo alloy containing at least one metal of group 5 of the periodic table, wherein the average content of group 5 metal 5 to 15 At% and the Mo content ≥ 80 At%. The sputtering target has an average C / O ratio in (At% / At%) of ≥ 1. The sputtering targets according to the invention can be produced by forming and have an improved sputtering behavior.
    公开号:AT13602U2
    申请号:TGM354/2013U
    申请日:2013-10-29
    公开日:2014-04-15
    发明作者:Nikolaus Reinfried；Michael Schober；Wolfram Knabl；Jörg Winkler
    申请人:Plansee Se；
    IPC主号:
    专利说明:

    Description: [0001] The invention relates to a sputtering target comprising molybdenum (Mo) and at least one metal of group 5 of the Periodic Table, wherein the mean content Cm of Group 5 metal is 5 to 15 At% and the Mo content is> 80 At% be.
    Sputtering, also called sputtering, is a physical process in which atoms are removed from a sputtering target by bombardment with high-energy ions and pass into the gas phase. Sputtering targets from Mo, which contain group 5 metals, are known.
    Thus, EP 0 285 130 A1 describes a sputtering target of a Mo alloy containing 50 to 85 At% tantalum (Ta). JP 2002 327264 A discloses a Mo alloy sputtering target containing 2 to 50 at% niobium (Nb) and / or vanadium (V), a specific gravity> 95%, a flexural strength> 300 MPa and a grain size < 300 pm. The sputtering target has a diffusion phase and at least one pure phase or only diffusion phase. JP 2005 307226 A discloses a Mo alloy sputtering target containing 0.1 to 50 at% of a transition metal. The sputtering target has a length> 1 m and a homogeneous density of> 98%. Alternatively, JP 2005 307226 A describes a sputtering target which has composition variations of <20% over its entire length.
    Mo-Nb and Mo-Ta sputtering targets are used, for example, for the production of electrode layers for thin-film transistors or of contact layers for touch panels. The increasing requirements with regard to layer quality and homogeneity, and this in ever-increasing dimensions, is the goal of numerous development activities. Thus, JP 2008 280570 A describes a production process for a Mo-Nb sputtering target with an Nb content of 0.5 to 50 at%, in which initially a Mo sintered body is produced, which in turn is broken down into powder. The Mo powder thus prepared is subjected to a reducing treatment and mixed with Nb powder. Subsequently, this mixture is compacted by hot isostatic pressing. Although this process makes it possible to reduce the oxygen content in the powder, it can not achieve a further reduction of the oxygen content in the sputtering target since the hot isostatic pressing takes place in a closed container (jug). In addition, it is not possible to distribute Nb in a homogeneity required for many applications in the Mo.
    JP 2005 290409 A in turn describes a sputtering target of a Mo alloy containing 0.5 to 50 at% of a metal of the group Ti, Zr, V, Nb and Cr, wherein the oxygen contained in the target of oxides in the interface region Mo-rich phase / alloying element-rich phase. The preferred method of preparation therefor comprises the steps of mixing Mo powder and powder of the alloying element, sintering, breaking the sintered product into powder, and compacting the thus-produced powder by hot isostatic pressing in the known state. The oxides adversely affect the homogenization of the sputtering target during the hot pressing because the grain boundary diffusion rate is reduced. In addition, the oxides have a detrimental effect on the sputtering behavior.
    JP 2013 83000 A describes the preparation of a Mo alloy sputtering target containing 0.5 to 60 at% of one or more elements of the group Ti, Nb and Ta, Mo powder containing a hydride powder of the alloying element is mixed, this mixture is degassed at 300 ° C to I.OOOO and then compressed by hot isostatic pressing. Although the hydride powder decomposes during degassing to the metal powder, in further processing steps, however, oxygen uptake occurs again due to adsorption on surfaces of the powder particles. This oxygen is not degraded during hot isostatic pressing.
    The described sputtering targets do not meet the increasing requirements with regard to layer homogeneity, homogeneity of the sputtering behavior and avoidance of unwanted local smuts. Local smudges are produced, for example, by
    Processes (local formation of an arc) caused.
    With the fabrication technologies described, it is not possible to produce sputtering targets that meet the requirements described above for at least one of the following reasons: [0009] a) oxides impede grain boundary diffusion; B) oxygen degradation during the consolidation process is not possible; C) the consolidation process does not lead to a sufficient homogenization of the alloying elements; D) interfacial and grain boundary volume and defect density, which are partly responsible for a sufficiently high diffusion rate, are not sufficiently high enough; E) the consolidation process leads to an impermissibly high grain coarsening; F) the powder used leads to a coarse-grained sputtering target.
    It is an object of the present invention to provide a sputtering target that meets the requirements described above and / or does not have the deficiencies described above. In particular, it is an object of the invention to provide a sputtering target, with which a very homogeneous layer, both in terms of chemical composition, and layer thickness distribution can be produced and which does not tend to local melts by arc processes. In addition, the sputtering target should have a uniform sputtering behavior. A uniform sputtering behavior is understood to mean that the individual grains or the individual regions of the sputtering target can be removed at the same speed, so that no relief structure is created in the area of the sputtered surface during the sputtering process.
    Another object of the present invention is to provide a preparation path that allows the production of a sputtering target having the aforementioned properties in a simple and process-constant manner.
    The object is solved by the independent claims. Special embodiments are described in the subclaims.
    The sputtering target comprises Mo and at least one metal of group 5 of the periodic table. Group 5 metals are Ta, Nb and V. The average content Cm of Group 5 metal is 5 to 15 at%, the Mo content> 80 at%. The group 5 metal is preferably completely dissolved in the Mo, which favorably influences a uniform sputtering behavior. By completely dissolved, it is meant that the content of Group 5 metal, which is elemental (as Ta, Nb and / or V grains) or as an oxide, is <1 vol.%. The sputtering target has an average C / O (carbon / oxygen) ratio in (At% / At%) of> 1, preferably> 1.2. To determine the average C / O ratio, 3 center and 3 edge samples are taken from the sputtering target, analyzed and the mean value calculated. The carbon is determined by combustion analysis (CA), the oxygen by carrier gas heat extraction (HE). In the following text, the average C / O ratio is referred to as C / O ratio.
    Group 5 metals in the dissolved state exert a strong mixed crystal strengthening effect on Mo. Mixed crystal strengthening is accompanied by a significant reduction in ductility and formability. While biphasic (Mo-rich phase-group 5 metal-rich-phase) alloys can be processed by forming in a simpler and more process-consistent manner, since the Group 5 metal-rich phase exerts a ductilizing effect, this has been true for very homogeneous mixed-crystal alloys to date not possible. By a C / O ratio of> 1 is now ensured that the production can include a forming step, while at a C / O ratio at <1, a reliable production by forming is not sufficiently given. The reason is presumably because a C / O ratio of> 1 leads to an increase in grain boundary strength, whereby grain boundary cracks can be avoided. How the forming step has a positive effect on the properties of the sputtering target will be explained in detail below. With a C / 0 ratio in (At% / At%) of> 1, it is now possible for the first time to combine the positive effects of alloy homogeneity and forming texture in one product. Surprisingly, a C / O ratio of> 1 not only has a positive effect on reshaped sputtering targets, but also favorably influences the sputtering behavior of only sintered or sintered hot-isostatic pressing compacted sputtering targets. The hot isostatic pressing is preferably carried out without the use of a jug.
    How a C / O ratio of> 1 process constant is adjustable, will be described in more detail below. The C / O ratio of> 1 also allows the setting of a low oxygen content in the sputtering target. An oxygen content of <0.04 At%, preferably <0.03 At%, particularly preferably <0.02 At% is feasible. Preferably, the sputtering target is free of oxides. Unwanted arc processes can thus be reliably avoided. In the context of this invention, free of oxides is to be understood as meaning that, when examined by a scanning electron microscope at a magnification of 1000 ×, the number of detectable oxide particles is in a range of 0.01 mm -1. Preferably, in a range of 0.1 mm ^, the number of detectable oxide particles <1.
    Furthermore, the sputtering target preferably has a forming texture. A re-form texture is created as the name implies in a forming process. A forming texture is not lost in a subsequent annealing treatment, such as a recovery or recrystallization annealing. The sputtering target according to the invention can therefore be in a state as-deformed, recovered, partially recrystallized or fully recrystallized. The forming texture may for example be due to a rolling, forging or extrusion process. The forming process results in grains that are aligned to a large extent with the same or similar orientation to the surface of the sputtering target. As a result, the sputtering behavior becomes uniform, since the removal rate depends on the orientation of the grains.
    It is also advantageous for a uniform sputtering removal if the forming texture has the following dominating orientations: a. In the forming direction: 110 b. Perpendicular to the forming direction: at least one orientation of the group 100 and 111.
    If the direction was changed during the forming, as is possible with plate-shaped geometries, is to be understood as the forming direction, the direction in which stronger (with higher degree of deformation) was deformed. By dominating the orientation is understood with the highest intensity. Typically, the intensity is greater than 1.5 times, preferably 2 times, the background intensity.
    The forming texture is determined by means of SEM (scanning electron microscope) and EBSD (electron backscatter diffraction). The sample is installed at an angle of 70 °. The incident primary electron beam is inelastically scattered at the atoms of the sample. If some electrons hit lattice surfaces in such a way that the Bragg condition is fulfilled, constructive interference occurs. This gain now happens for all grating surfaces in the crystal, so that the resulting diffraction pattern (English: electron backscatter pattem, also Kikuchi pattern) includes all angular relationships in the crystal and thus also the crystal symmetry. The measurement is carried out under the following conditions: - acceleration voltage: 20 kV, [0028] - aperture 120 pm, - working distance 22 mm - high-current mode - activated [0031] - Scanned area: 1761 x 2643 μπι ^.
    Index step size: 3 μπι.
    The preferred density of the sputtering target, based on the theoretical density of the respective composition, is> 88% in the only sintered state,> 96% in the sintered and hot isostatically compacted state and> 99.5%, preferably> 99.9% in the deformed state. The high density in conjunction with the low oxygen content ensures an arc-free sputtering.
    Furthermore, it is advantageous if the dso and dgo value of the particle size distribution, measured transversely to the last deformation direction, satisfies the following relationship: dgo / dso <5.
    Preference is dgo / dso ^ 3, more preferably <1.5.
    To determine the grain size, a cross-section is made and the grain boundaries made visible by means of EBSD. The evaluation of the mean and maximum grain size then takes place by quantitative metallography. The evaluation takes place in accordance with ASTM E 2627-10. A grain boundary is defined so that the orientation difference between two adjacent grains is> 5 °. The particle size distribution with dgo and dso value is determined by quantitative image analysis. It has been shown that a narrow particle size distribution has a very positive influence on the homogeneity of the sputtering behavior. In contrast to other materials, with Mo Group 5 metal sputtering targets sputter grains with a larger grain diameter more strongly than grains with a smaller grain diameter. The reason for this is not yet clear, but may be due to different density of defects or a channeling effect (lattice effect - penetration of an ion due to linear regions without lattice atoms). With the aforementioned dgo / dso ratio, this unfavorable uneven sputtering behavior can be almost suppressed.
    The group 5 metal is not only complete, but also solved in an extraordinary way evenly distributed in Mo. The standard deviation σ of the group 5 metal distribution measured by SEM / WDX preferably fulfills the relationship σ <Cm x 0.15, particularly preferably σ <Cm x 0.1.
    Since the sputtering rate depends on the respective alloying element content, a sputtering target with a very homogeneous group 5 metal distribution according to the invention has an extremely uniform sputtering behavior. On the one hand, this uniform sputtering behavior causes the layers produced to have an extremely homogeneous thickness distribution and, on the other hand, that the sputtering target still has low surface roughness / relief formation even after prolonged use. This, in turn, is a prerequisite for the sputtering behavior to be uniform over a long period of time.
    Furthermore, the group 5 is preferably metal Ta and / or Nb. Mo-Ta and Mo-Nb alloys have a particularly favorable corrosion and etching behavior. The alloy advantageously consists of Mo and 5 to 15 At% Group 5 metal and typical impurities. Typical contaminants are impurities that are usually already found in the raw materials or that are due to the manufacturing process.
    In a particularly advantageous manner, a sputtering target according to the invention is designed as a tube target. It has been found that under the usual sputtering conditions for pipe targets, microstructural features such as oxides, homogeneity or the ratio of the average to the maximum grain size exert a stronger influence than is the case with flat targets.
    The sputtering target of the invention can be prepared in a particularly simple and process-constant manner, if the method comprises the following steps: - Preparation of a powder mixture comprising: i. > 80 at% Mo powder; Ii. Powder of at least one group of 5 metal, wherein the content of group 5 metal in the powder mixture is 5 to 15 at%; and III. a C source, wherein the amount of C is selected so that in the powder mixture of the
    Total content of C Σο in At% and the total content of O Σο in At% satisfy the following relationship: 0.2 <Σο / Σο <1.2; and - Consolidation of the powder mixture.
    By a Σο / Σο ratio in the range of 0.2 to 1.2 ensures that in the sputtering target a C / 0 ratio of> 1 can be set. The oxygen degradation during further process steps is preferably carried out by reaction of the oxygen with carbon and hydrogen.
    The total content Σο of oxygen in the powder mixture comprises the oxygen content in the Mo powder and the oxygen content in the group 5 metal. The oxygen is mainly present in adsorbed form on the surface of the powder particles. In conventional production and storage, the oxygen content in the Mo powder at a Fisher particle size of 2 to 7 μm is typically 0.1 to 0.4 at%. For Group 5 metals with a Fisher particle size of 4 to 20 pm, the oxygen content is typically 0.3 to 3 at%. The total content Σο of carbon includes the carbon content in the Mo powder, the carbon content in the group 5 metal and the carbon content of the C source. The carbon source may be, for example, carbon black, activated carbon or graphite powder. However, it may also be a carbon-releasing compound such as Nb-carbide or Mo-carbide.
    It is first determined by conventional methods, the oxygen and carbon content of the powder used and then determined the required amount of powder of the C source. The powders are then mixed and consolidated by conventional methods. Consolidation is understood to mean processes that lead to compaction. Preferably, the consolidation is carried out by cold isostatic pressing and sintering. Sintering is understood to mean processes in which the compression is due only to the action of heat and not to pressure (as is the case, for example, in hot isostatic pressing).
    During a heat treatment, preferably during the sintering process, the carbon of the carbon source reacts with the oxygen present in the powder to CO2 and to a lesser extent to CO. This reaction is preferably carried out at temperatures where the sintered sheet still has open porosity. Compaction processes in which the material to be compacted is in a jug, as is the case for example with hot isostatic pressing, are less suitable for advantageously using the method according to the invention. If the hot isostatic pressing is carried out with a pot, the inventive powder mixture is subjected to a separate annealing / degassing treatment.
    Preferably, the total carbon content Σο and the total oxygen content Σο in the powder satisfy the following relationship: 0.4 <Σο / Σο ^ 1.1, more preferably 0.6 <Σο / Σο ^ 1 very high process reliability can be achieved.
    The pressing operation is advantageously carried out at pressures of 100 to 500 MPa. If the pressure is <100 MPa, sufficient density can not be achieved during sintering. Pressures of> 500 MPa mean that during the sintering process, the compounds resulting from the reaction of carbon and oxygen are not removed from the sinter sufficiently quickly because the gas permeability is too low. Preferably, the sintering temperature is between 1,800 and 2,500'Q. Temperatures below 1,800 ° C lead to very long sintering times or insufficient density and homogeneity. Temperatures above 2,500 ° C lead to grain growth, whereby the advantageous homogeneity of the particle size distribution is adversely affected.
    The advantageous particle size of the Mo powder is 2 to 7 μη and that of the group 5 metal powder 4 to 20 pm. The particle size is determined using the Fisher method. If the particle size of the group 5 metal> 20 pm, the alloy tends increasingly to form Kirkendall pores when using a non-pressurized compression process. If the powder grain size of the Group 5 metal is <4 pm, the oxygen content (oxygen adsorbed on the surface of the powder particles) is too high and the advantageous, low oxygen values can only be achieved through costly production steps, such as special degassing steps.
    If the particle size of the Mo powder exceeds 7 μm, this leads to a reduced sintering activity. If the particle size is less than 2 pm, the gas permeability in the green compact is significantly worsened. Also, the greenling begins to sinter at lower temperatures. Both effects lead to a deterioration of oxygen during the sintering process.
    Preferably, the powder mixture contains no other alloying elements except Mo, group 5 metal and carbon source. Impurities are present to an extent that is typical of these materials.
    If further alloying elements are used, their total content must not exceed 15 at%. Alloying elements which do not unfavorably influence the sputtering and etching behavior prove themselves. Suitable alloying metals include, for example, W and Ti.
    The sintering is advantageously carried out in a vacuum, an inert atmosphere and / or a reducing atmosphere. Under inert atmosphere is to be understood as a gaseous medium that does not react with the alloy components, such as a noble gas. Hydrogen is particularly suitable as the reducing atmosphere. Advantageously, the reaction of C and O to CO2 or CO is carried out in vacuo or in an inert atmosphere, for example during the heating process. Thus, the resulting reaction products can be efficiently removed. In addition, the formation of hydrides of Group 5 metals is avoided. The finished sintering is then preferably at least temporarily in a reducing atmosphere, preferably under hydrogen.
    After consolidation, a forming process is preferably carried out. Forming can be done, for example, with flat targets by rolling, with tube targets by extrusion or forging. The preferred degree of deformation is 45 to 90%. The degree of deformation is defined as follows: (Aa - Au) / Aa X 100 (in%)
    Aa ... cross-sectional area before forming
    Au ... Cross-sectional area after forming [0060] At degrees of deformation <45%, the density and uniformity of the sputtering behavior is adversely affected. Forming degrees> 90% have an unfavorable effect on the production costs. The forming temperature is preferably at least temporarily 900 ° C to 1500 * Ό. Under temporary is understood that, for example, the first forming steps are carried out at this temperature. Thereafter, the forming temperature may be less than 900. The transformation can be carried out both in one step and in several steps.
    If the sputtering target designed as a flat target, this is preferably soldered to a back plate. Pipe targets can be connected to a support tube, preferably again by a soldering process, or used as monolithic sputtering targets. The soldering material used is preferably indium or an indium-rich alloy.
    In the following, the invention will be explained by way of example of a manufacturing example.
    FIG. 1 shows a SEM image with WDX scan of rolled Mo-10 At% Nb.
    The following powders were used for this purpose: Mo powder having a Fisher particle size of 4.5 gm, an oxygen content of 0.24 At% and a carbon content of 0.03 At% - Nb Powder with a Fisher particle size of 8 gm, an oxygen content of 1.26
    At% and a carbon content of 0.46 At% In order to achieve a Σο / Σο value of 0.7 at a Mo feed rate of 758 kg and a Nb feed amount of 81.6 kg, were 0.336 kg of soot powder with a Fisher grain size of 0.35 gm mixed with the Mo and Nb powder in a compulsory mixer. From this powder mixture, 4 plates were prepared by cold isostatic pressing at a pressure of 180 MPa. The plates were sintered at a temperature of 2,150 ° C., the heating process being carried out in vacuo for 3 hours up to a temperature of 1,200 ° C. Thereafter, H2 was used as the process gas. The sintered body had a density of 8.9 g / cm 2 (88.6% of theoretical density), a C content of 0.022 at% and a 0-content of 0.018 at%. The C / O ratio was 1.22.
    The sinter was subjected to SEM / EDX examination. Nb and Mo are completely intertwined. No oxides could be detected.
    Thereafter, the sintered compact was rolled, wherein the forming temperature was 1450 ° C and the degree of deformation was 78%. A sample was taken from the rolled plate and ground and polished by standard metallographic methods. From a longitudinal sample, the texture was determined using SEM / EBSD.
    The following settings were used for this: acceleration voltage: 20 KV, [0072] working distance: 22 mm, [0073] high current mode activated, [0074] aperture 120 pm scanned area 1761 x 2.643 pm ^ [0076] - index step size 3 pm.
    The evaluation of the inverse pole figure resulted in the longitudinal direction (forming direction) 110 as dominating texture with> 2 x background. In the normal direction (perpendicular to the forming direction) both the 100 and the 111 orientation with> 2 x background were measured.
    In a transverse section, the particle size was determined by means of EBSD. All grain orientation differences between two adjacent grains of> 5 ° were defined as grain boundaries. The particle size distribution was determined by quantitative image analysis. The dso value in an evaluation range of 20,000 pm ^ was 15 pm, the dgo value 35 pm. The dgo / dso ratio was 2.3. This measurement was determined in 10 other places in an analogous manner and a mean dgo / dso ratio determined. This was 2.41. The rolled plate was also examined for homogeneity of Nb distribution by SEM / EDX and SEM / WDX. FIG. 1 shows a WDX scan over a distance of 1 mm. Measured over this distance, the standard deviation of the Nb distribution was 1.02 At%.
    The sputtering behavior of sputtering targets produced in this way was determined by sputtering experiments at Ar (argon) pressures in the range from 2.5 × 10 -4 to 1 × 10 -5 mbar and an output of 400 or 800 watts. The substrate material used was soda-lime glass. The sputtering targets could be sputtered without the occurrence of arc processes. The resistivity of the deposited layers (layer thickness = 200 nm) was low, depending on the sputtering conditions at 13.7 to pQcm. The layers had compressive stresses in the range of -1,400 to -850 MPa.
    权利要求:
    Claims (22)
    [1]
    claims
    A Mo alloy sputtering target containing at least one metal of Group 5 of the Periodic Table, wherein the average content Cm of Group 5 metal is 5 to 15 At% and the Mo content is> 80 at%, characterized in that the sputtering target has a mean C / O ratio in (At% / At%) of> 1.
    [2]
    2. Sputtering target according to claim 1, characterized in that the group 5 metal is completely dissolved in the Mo.
    [3]
    3. Sputtering target according to claim 1 or 2 characterized by a forming texture.
    [4]
    4. Sputtering target according to claim 3, characterized in that the forming texture has the following dominant orientations: a. In the forming direction: 110 b. Perpendicular to the forming direction: at least one orientation of the group 100 and 111.
    [5]
    5. sputtering target according to claim 3 or 4, characterized in that the dso and the dgo value of the particle size distribution, measured transversely to the last Umformrichtung, satisfies the following relationship: dgo / dso <5.
    [6]
    6. sputtering target according to one of claims 1 to 5 characterized by an O content <0.04 at%.
    [7]
    7. Sputtering target according to one of claims 1 to 6, characterized in that it is free of oxides.
    [8]
    8. sputtering target according to one of claims 1 to 7, characterized in that the relative density> 99.5% of the theoretical density.
    [9]
    9. sputtering target according to one of claims 1 to 8, characterized in that the group 5 metal uniformly distributed in solution, wherein the standard deviation σ of the group 5 metal distribution satisfies the relationship: σ <Cm X 0.15.
    [10]
    10. Sputtering target according to one of claims 1 to 9, characterized in that the group 5 metal is Ta or Nb.
    [11]
    11. sputtering target according to one of claims 1 to 10, characterized in that it consists of 5 to 15 at% group 5 metal, the remainder Mo and typical impurities.
    [12]
    12. sputtering target according to one of claims 1 to 11, characterized in that this is a tube target.
    [13]
    13. A method for producing a sputtering target, characterized in that it comprises the following steps: a. Preparation of a powder mixture comprising: i. > 80 at% Mo powder; ii. Powder of at least one group of 5 metal, wherein the content of group 5 metal in the powder mixture is 5 to 15 at%; and iii. a C source, where the C amount is chosen so that in the powder mixture the total content of C Σο in At% and the total content of 0 Σο in At% satisfy the relationship: 0.2 <Σο / Σο <1.2 ; b. Consolidation of the powder mixture.
    [14]
    14. The method according to claim 13 for producing a sputtering target according to one of claims 1 to 12.
    [15]
    15. The method according to claim 13 or 14, characterized in that the method comprises a forming process.
    [16]
    16. The method according to any one of claims 13 to 15, characterized in that the consolidation is carried out by: a. Pressing the powder mixture at 100 to 500 MPa into a green compact, and b. Sintering the green body at a temperature T, with 1,800KD <T <2,500 ° C.
    [17]
    17. The method according to any one of claims 13 to 16, characterized in that the Mo powder has a measured by Fisher particle size of 2 to 7 pm and the group 5 metal has a measured by Fisher particle size of 4 to 20 pm.
    [18]
    18. The method according to any one of claims 13 to 17, characterized in that Σο and Σο satisfy the following relationship: 0.4 <Σο / Σο <1.1.
    [19]
    19. The method according to any one of claims 13 to 18, characterized in that the powder mixture in addition to typical impurities contains no further alloying elements.
    [20]
    20. The method according to any one of claims 13 to 19, characterized in that the deformation takes place by rolling, extrusion or forging, wherein the degree of deformation is 45 to 90%.
    [21]
    21. The method according to any one of claims 13 to 20, characterized in that the sintering is carried out in at least one atmosphere selected from vacuum, inert atmosphere and reducing atmosphere.
    [22]
    22. The method according to claim 21, characterized in that the sintering is performed at least temporarily during the heating process in at least one atmosphere selected from vacuum and inert atmosphere and at least temporarily during a holding time to sintering temperature in a reducing atmosphere.
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    同族专利:
    公开号 | 公开日
    US20160254128A1|2016-09-01|
    CN105683407B|2019-01-15|
    WO2015061816A9|2015-07-02|
    DE112014004949A5|2016-07-14|
    CN105683407A|2016-06-15|
    TWI654315B|2019-03-21|
    JP6479788B2|2019-03-06|
    WO2015061816A1|2015-05-07|
    AT13602U3|2014-08-15|
    JP2017502166A|2017-01-19|
    TW201516160A|2015-05-01|
    SG11201602431SA|2016-04-28|
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATGM354/2013U|AT13602U3|2013-10-29|2013-10-29|Sputtering target and method of preparation|ATGM354/2013U| AT13602U3|2013-10-29|2013-10-29|Sputtering target and method of preparation|
    TW103129321A| TWI654315B|2013-10-29|2014-08-26|Sputtering target and process for producing it|
    DE112014004949.2T| DE112014004949A5|2013-10-29|2014-10-27|Sputtering target and method of preparation|
    SG11201602431SA| SG11201602431SA|2013-10-29|2014-10-27|Sputtering target and production method|
    US15/033,427| US20160254128A1|2013-10-29|2014-10-27|Sputtering target and process for producing it|
    PCT/AT2014/000195| WO2015061816A1|2013-10-29|2014-10-27|Sputtering target and production method|
    CN201480059727.5A| CN105683407B|2013-10-29|2014-10-27|Sputter target and its manufacturing method|
    JP2016526772A| JP6479788B2|2013-10-29|2014-10-27|Sputtering target and manufacturing method thereof|
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